Polyimide (PI) is a heterocyclic polymer material obtained by condensing aromatic diamines and anhydrides. Among them, Photosensitive Polyimide (PSPI) is a special type of polyimide with photosensitive groups introduced, which is widely used in semiconductor manufacturing and electronic components.
Main Characteristics
1.Excellent Heat Resistance
With a decomposition temperature of over 300°C, it maintains its performance even in long-term high-temperature environments. This makes it suitable for use in harsh conditions such as automotive electronics and aerospace equipment.
2.High Insulation
It has a low dielectric constant (usually less than 3) and excellent frequency characteristics, making it suitable as an insulating material for high-frequency circuits and microwave devices.
3.Fine Processing Capability Due to Photosensitivity
It can be patterned using photolithography technology, allowing for the precise formation of fine shapes at the micrometer level. This is an essential property for interlayer insulation films in semiconductors and via formation in printed circuit boards.
4.Mechanical Strength and Flexibility
It has high tensile strength (usually over 100MPa) and flexibility, making it suitable for applications that require repeated bending, such as flexible printed circuit boards (FPC).
Main Applications
Semiconductor Manufacturing
Used as interlayer insulation films and passivation films in integrated circuits (ICs) to prevent short circuits between components and protect them from the environment.
Printed Circuit Board Technology
Used for via connections and fine wiring formation in multilayer boards, contributing to the realization of high-density interconnect technology (HDI).
Flexible Electronics
Serves as the substrate material for foldable displays and flexible sensors, playing an important role in fields where lightweight and thin profiles are required.
Heat-Resistant Components
Suitable for components around automotive engines and electronic equipment in aircraft that require reliability in high-temperature environments.
Challenges and Technical Advances
The main challenges of PSPI are characteristic degradation due to moisture absorption in wet processes and line edge roughness (LER) during fine pattern formation. In recent years, improved materials with lower moisture absorption rates have been developed through optimized molecular design. Additionally, the development of PSPI with higher compatibility with EUV lithography technology is progressing. These technological advancements are expected to enable the application of PSPI in advanced semiconductor processes below the 5nm node.