Germanium tetrafluoroide  GeF4  7783-58-6   6N     New Product Promotion  

It is an important class of inorganic compounds. In the semiconductor field, it is mainly used for doping and ion implantation, germanium tetrafluoride can be combined with ethylsilane gas to manufacture silicon germanium microcrystals directly on glass substrates, which can be used to manufacture low-noise and low-temperature amplifiers, rectifiers, oscillators, and other semiconductor devices; in the optical field, germanium tetrafluoride can be used in the optical glass manufacturing scenario as an additive to improve the refractive index and dispersion performance of the optical glass, and it can be used as raw material for optical fiber and optical film manufacturing scenarios.

Nitrogen trifluoride   NF3  7783-54-2   

The three main uses of NF3:  firstly, as a fluorine source for high-energy chemical laser gas; secondly, as an etchant and cleaning agent in the electronics industry (IC); and thirdly, in the solar photovoltaic industry.

Other uses of NF3: Used in the production of perfluorinated ammonium salts; used as a filler gas to increase the life and brightness of light bulbs; used as an oxidizing agent in mining and rocket technology; etc.

Chlorine trifluoride    CIF3   7990-91-2

It is a green, efficient and environmentally friendly gas with a GWP value of zero, making it an ideal LPCVD cleaning gas in the chip process.

Trifluoromethane     CHF3  75-46-7    6N   

A colorless, tasteless, non-conductive gas that is an ideal substitute for halogens. Trifluoromethane can be used as supercritical extraction solvent and cryogenic refrigerant. It is also used as fire extinguishing agent and raw material for the manufacture of tetrafluoroethylene, plasma chemical etching agent for electronic industry and raw material for fluorinated compounds. It is used as a cryogenic refrigerant and as a fire extinguishing agent and a raw material for the manufacture of tetrafluoroethylene. Used as low temperature (-100℃) refrigerant, electronic industry plasma chemical etching agent and fluorine organic compound raw material.

Difluoromethane     HFC-32  75-10-5

HFC-23 is a coolant with zero ozone depletion potential. Difluoromethane and HFC-Pentafluoroethane produce a constant-boiling blend (known as R-410A) that is used as a replacement for chlorofluorocarbons (also known as Freon) in new coolant systems, primarily replaces HCFC-22 as a compound medium and low temperature refrigerant blend. Although it has zero ozone depletion potential, it has a high global warming potential, 550 times that of carbon dioxide on a per 100-year time basis.

Methyl fluoride CH3F  593-53-3

As an anisotropic etching gas for Si3N4, it has a high selectivity ratio for SiO2 and Si, and is attracting attention in the process of etching the front-end microstructure. It is used in the fabrication of 3D NAND, DRAM, and Fin-FET semiconductor devices.

Phosphorus pentafluoride    F5P  7647-19-0  

Phosphorus pentafluoride is a commonly used semiconductor etching gas, often used for etching and surface treatment of silicon-based materials. It rapidly removes harmful oxides and organic contaminants from material surfaces, and is also capable of altering the chemical and physical properties of semiconductor surfaces.

Perfluoroisobutyronitrile   C4F7N  42532-60-5  

4710 is an environmentally friendly alternative to SF6 for power equipment insulation and arc quenching. It has excellent insulating properties, a wide temperature range and a significantly reduced environmental impact compared to SF6.

At a given pressure, the relative dielectric strength of pure Novec 4710 gas is twice that of SF6. This SF6 alternative also has a low global warming potential when mixed with noble gases and has zero ozone depletion potential. Both of these are significant in terms of reduced environmental impact compared to SF6. 4710 gas is non-flammable and enjoys a high margin of safety for workers when used for design purposes.

Hexafluoro-1,3-butadiene    685-63-2  C4F6  

Hexafluorobutadiene, also known as perfluorobutadiene, or HFBD, with the molecular formula C4F6, is an important monomer for the synthesis of resins and fluorinated substances, and is also used as an etching gas in the semiconductor industry, with the advantages of good selectivity and high accuracy. In addition, compared to the traditional Perfluoroalkane Verticals (PFCs) etching gas, Hexafluorobutadiene can be used in high aspect ratio processes with relatively low pollution to the atmosphere and the environment. With the rapid development of the semiconductor industry and the increasing environmental requirements in today's world, it has become a trend to replace the widely used PFCs with relatively environmentally friendly materials.

Perfluoropropane  C3F8     76-19-7  

In the semiconductor industry, octafluoropropane is used as plasma etching materials; In medicine, octafluoropropane can be used as a filler and ultrasound contrast agent after vitreoretinal surgery. Octafluoropropane is also used as an ingredient in refrigerating mixtures.

Octafluorocyclobutane  C4F8    115-25-3

Main applications include high voltage insulation, large scale integrated circuit etching, refrigerants, aerosols, electronic cleaners, sprays, and heat pump working fluids.

Fluorinated laser gas 

Carbon tetrafluoride  CF4  75-73-0

Carbon tetrafluoride is currently the largest amount of plasma etching gas in the microelectronics industry, and is widely used in the etching of silicon, silicon dioxide and other thin film materials. It is also used in a large number of applications such as surface cleaning of electronic devices, production of solar cells, and laser technology.

Sulfur hexafluoride  SF6 2551-62-4  

Electronic grade high purity sulfur hexafluoride is an ideal electronic etching agent, which is widely used in the field of microelectronics technology. In the refrigeration industry as a cooling agent, the cooling range can be -45 ℃ ~ 0 ℃. Electrical industry utilizes its high dielectric strength and good arc extinguishing performance, used as high-voltage switches, large-capacity transformers, high-voltage cables and gas insulating materials.

Fluorine-nitrogen mixture

Fluorine and nitrogen mixture is an important raw material in the field of fine chemicals, which is widely used in the fields of electronics, laser technology, medicine and plastics, etc. It can be used for glass etching, surface passivation treatment of metal materials and pipes.

Hexafluoroethane  C2F6  76-16-4

1.Used as insulating gas, plasma etching agent, high dielectric strength cooling agent.

2.Used in microelectronics industry as plasma etching gas and device surface cleaning, fiber optic production, low temperature refrigeration.

Hexafluoroethane is widely used in semiconductor manufacturing processes for its non-toxicity, odorlessness, and high stability, such as as an etchant ( Dry Etch), and cleaning cavities after Chemical Vapor Deposition (CVD). Especially with the development of semiconductor devices, integrated circuits with higher and higher precision requirements, conventional wet etching can not meet the requirements of 0.18~0.25um deep sub-micron integrated circuits with high-precision fine line etching. Hexafluoroethane as a dry etchant has the advantages of minimal edge lateral erosion, high etching rate and high precision, which can meet the requirements of such processes with small line widths. In particular, the original octafluorocyclobutane was not able to etch when contacting components with a pore size of 140 nm or smaller, whereas hexafluoroethane could produce a deep groove in components as small as 110 nm. In addition, in the field of cleaning gases for CVD chambers, the gases traditionally used are hexafluoroethane and tetrafluoromethane CF4, while octafluoropropane C3F8 and nitrogen trifluoride F3N have been introduced in order to comply with the latest process specifications and production efficiency. For various CVD processes based on SiH4, hexafluoroethane is superior to tetrafluoromethane as a cleaning gas, mainly in terms of low emissions, high gas utilization, and reflecting high choking cleanliness and equipment output.